| PART |
Description |
Maker |
| CLE230 CLE231 CLE232 CLE233 |
High Power Aluminum Gallium Arsenide IREDs
|
List of Unclassifed Manufacturers
ETC
Clairex Technologies, Inc
|
| CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode
|
Clairex Technologies
|
| CLE331W |
Aluminum Gallium Arsenide IRED Point Source Die
|
Clairex Technologies, Inc
|
| CLE300F |
Aluminum Gallium Arsenide IRED Flat Lead PLCC Package
|
Clairex Technologies, Inc
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| IRF100 IRF400 IRF250 IRF150 IRF200 IRN50S IRN100 I |
GT 3C 3#16S PIN PLUG
50W to 500W High Power Wire Wound Resistirs Flat Shaped Aluminum Housed
(IRF150 - IRF500) 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
|
Nikkohm
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
|
| ML46580S-992 |
High Reliability Semiconductor . Beam Lead Gallium Arsenide Tuning Varactor Diode
|
MACOM[Tyco Electronics]
|
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
